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英语翻译The charge displaced into the mosfet depends onthe maxim

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英语翻译
The charge displaced into the mosfet depends on
the maximum voltage applied to the mosfet,the detailed design of the
mosfet cell and the number of cells used.An exact voltage-charge profile
was found through a mixed-mode FE simulation of the charging of the
capacitor and converter.The results are shown in Figure IO for numbers of
cells between 6 and 100 (corresponding to mosfets designed for 6-100
mA).At 100 cells there is a significant displacement of charge into the
mosfet but below 30 cells the displacement does not greatly affect the
recoverable charge.
Mixed-mode circuit/FE simulation was also used to assess the efficiency of
the converter in converting the stored energy at high voltage to a 3 V output.The
circuit was that given in Figure 5 and the simulation was performed
for a range of inductor values and a range of numbers of mosfet cells.The
generator was modelled as a IO pF capacitor charged to 300 V.The mosfet was turned on IO ns
into the simulation with a 3 V signal driving through a 10 fl gate resistor
递次进入场效应管的电荷量,取决施加于场效应管的最高 电压,在设计细节上,使用的单元数量,要考虑电荷的充电效应,模拟试验对场效应(FE)的电容和整流元件,其结果在图中表明 输入和输出在6-100单元之间的的数据.(与设计效应管6-100毫安相一致)100个管的电荷进入是有効的,低于30个管,对恢复电荷没有大的影响.
混合仿真线路,即场效应(FE)模拟试验还用到评估整流器的整流 转化效能,从高压至3伏输出,该线路 效能.见图5
对于场效应管的电感取值的数字范围,模拟发电机的输入输出近乎P法的电容,充电到300伏,场效应管通过的输入输出延几纳秒.进入模拟和3伏的信号驱动通过10个平衡门电阻.