英语翻译The third generationof bulk thermoelectrics has been und

英语翻译
The third generationof bulk thermoelectrics has been under development recently,which integrates manycutting-edge ZT enhancing approaches simultaneously,namely,enhancementof Seebeck coefficients through valence band convergence,11–13 retention of the carrier mobility through band energyoffset minimization between matrix and precipitates,14–16 and reduction of (lattice) the thermal conductivity throughall length-scale phonon scattering via hierarchical architecturingfrom atomic-scale lattice disorder and nanoscale endotaxial precipitates tomesoscale grain boundaries and interfaces.17
This third generation of bulk thermoelectricsexhibits high ZT,ranging from 1.8 to 2.2,depending on the temperature difference ΔT,and the consequentpredicted device conversion efficiency increases to 15–20%.Fig.1 showsthe major milestones achieved for ZT over the past several decades as afunction of both year and temperature.Although this “landscape” is now rapidlyevolving because of continued advances in the field,at this point in time,alltop performing materials involve nanostructuring.It is important to note thatsome ZT claims in Fig.1 have not yet been independently verified.
Owing to the widescope of thermoelectricmaterials research,which covers theoreticalinvestigations,materials design,materials processing,and device assembly,herein we only review recent progress in enhancing the performance of bulk thermoelectricmaterials using state-of-the-art approaches.

第三代块状热电材料最近已在研究中,其同时结合进了很多尖端的ZT提高方法,即通过价带的会聚来提高赛贝克（Seebeck）系数[11-13]；通过基体和析出物之间的带能偏移的最小化保持载流子的迁移率[14-16]；以及通过所有长度规模（all-length scale）的声子散射降低（晶格）的热导率,这里的声子散射通过从原子规模的晶格紊乱和纳米规模的内延析出到介观尺度的晶粒边界和界面的分层体系结构化而实现[17].
这种第三代的块料热电材料呈现出高的ZT,范围从1.8到2.2,其取决于温度差ΔT,而作为结果预测的器件转换效率提高到大约15～20%.图1示出了在过去几十年间ZT值所达到的主要里程碑,及其与年份和温度的函数关系.虽然这一“情景”因为在这一领域不断取得的进展现在正在迅速演进,但在这个时间点上,所有顶尖的材料都涉及到纳米结构化.需要指出的是,在图1中声称的某些ZT值还没有独立验证过.
由于热电材料研究的视野广阔,它涵盖了理论研究、材料设计、材料加工和器件组装,所以我们在这里仅评述用最新方法提高块状热电材料性能方面的最新进展.