作业帮英语翻译Incidentally the band offsets are expected to decrease w
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英语翻译
Incidentally the band offsets are expected to decrease with rising temperature due to thermal band broadening,thus minimizing significant deterioration of the hole mobility at
high temperatures,as shown in Fig.12.
Besides the lead chalcogenide family,the approach of matrix/inclusion band alignment has been successfully implemented in the SiGe system.72 The electrical conductivity of a Si86.25Ge13.75P1.05 sample was improved by 54% using the modulation-doping approach in (Si95Ge5)0.65(Si70Ge30P3)0.35.The Si nanoparticles form proper band alignments with the SiGe matrix to promote the flow of carriers from the nanoparticles into the matrix.The enhancement in electrical conductivity comes from the 50% improvement of the carrier mobility.Additionally,the thermal conductivity can be kept low due to the low thermal conductivity of the nanoparticles.The enhanced electrical conductivity coupling with negligibly changed Seebeck coefficient and the lower thermal conductivity produces a peak ZT of \x021.3 at 1173 K in (Si95Ge5)0.65(Si70Ge30P3)0.35.
Incidentally the band offsets are expected to decrease with rising temperature due to thermal band broadening,thus minimizing significant deterioration of the hole mobility at
high temperatures,as shown in Fig.12.
Besides the lead chalcogenide family,the approach of matrix/inclusion band alignment has been successfully implemented in the SiGe system.72 The electrical conductivity of a Si86.25Ge13.75P1.05 sample was improved by 54% using the modulation-doping approach in (Si95Ge5)0.65(Si70Ge30P3)0.35.The Si nanoparticles form proper band alignments with the SiGe matrix to promote the flow of carriers from the nanoparticles into the matrix.The enhancement in electrical conductivity comes from the 50% improvement of the carrier mobility.Additionally,the thermal conductivity can be kept low due to the low thermal conductivity of the nanoparticles.The enhanced electrical conductivity coupling with negligibly changed Seebeck coefficient and the lower thermal conductivity produces a peak ZT of \x021.3 at 1173 K in (Si95Ge5)0.65(Si70Ge30P3)0.35.
顺便提及,带偏移预计会由于热的带展宽而随着温度的上升而下降,从而使高温下的空穴迁移率的显著恶化最小化,如图12所示
除了铅硫族之外,基体/杂质带对准的方法已成功地在SiGe系统中实现.[72]一个Si86.25Ge13.75P1.05样品的电导率通过在（Si95Ge5）0.65（Si70Ge30P3）0.35中使用调制-掺杂法得到了提高.Si纳米颗粒与SiGe基体形成适当的带对准,从而促进了载流子从所述纳米颗粒流动进入基体中.电导率的增强来自于载流子迁移率50％的提高.此外,热导率由于纳米颗粒的的热导率而可以保持低位.提高了的电导率与变化可以忽略的塞贝克（Seebeck）系数和较低的热导率结合,在（Si95Ge5）0.65（Si70Ge30P3）0.35中产生了在1173 K下1.3的峰值ZT.
除了铅硫族之外,基体/杂质带对准的方法已成功地在SiGe系统中实现.[72]一个Si86.25Ge13.75P1.05样品的电导率通过在（Si95Ge5）0.65（Si70Ge30P3）0.35中使用调制-掺杂法得到了提高.Si纳米颗粒与SiGe基体形成适当的带对准,从而促进了载流子从所述纳米颗粒流动进入基体中.电导率的增强来自于载流子迁移率50％的提高.此外,热导率由于纳米颗粒的的热导率而可以保持低位.提高了的电导率与变化可以忽略的塞贝克（Seebeck）系数和较低的热导率结合,在（Si95Ge5）0.65（Si70Ge30P3）0.35中产生了在1173 K下1.3的峰值ZT.
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